Developed in the 1980s, CMP removes material from uneven topography on a wafer surface until a flat surface is created, and thus allows more accurate photolithography. The process combines the chemical removal effect of an acidic or basic fluid solution with the mechanical effect provided by polishing with an abrasive material. The critical components required for CMP are a reactive liquid medium and a polishing pad surface, either of which may contain nano-size inorganic particles.
CMP plays a crucial role in the ability to maufacture smaller and smaller semiconductors. It is the only known technique for producing die level flatness required for sub 0.5-micron devices is considered a requirement for the production of sub 0.2-micron device structures and advanced interconnect schemes.
In the fabrication of copper-based semiconductors, CMP is used to define the copper wiring structures, which enables chipmakers to continue shrinking circuits and extends the performance of lithographic tools.
Rodel, headquartered in Phoenix with manufacturing and research facilities in Newark, Del., is a part of the Electronics Materials Group of Philadelphia-based Rohm and Haas.








Digg
Del.icio.us
Facebook
Google
StumbleUpon
Technorati
More stories by this author
